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This article introduces the Si and SnO 2 / Glass two materials as a substrate , using hot wall epitaxy method to get a well-structured , suitable for GaAs GaAs polycrystalline thin film solar cells . Electron probe (EPMA) component of the film was measured , the surface and cross-section morphology , X-ray diffraction (XRD) analysis of the structure of film growth , Raman scattering (RSS), photoluminescence (PL) spectrum of the optical properties , and Determination of the conduction type of the film and sheet resistance of two basic electrical parameters . Structure shows good performance of the film , the surface was textured structure , columnar grain structure , suitable for production of GaAs thin film solar cells . Preparation of a comprehensive analysis of the existing conditions on the GaAs thin films , The optimum growth conditions . SnO 2 / Glass: source temperature of 930 ℃, substrate temperature of 500 ℃, the growth time of 4 hours Si: source temperature of 900 ℃, substrate temperature of 700 ℃, the growth time of 3 hours
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