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The Microwave Properties of c-axis Oriented BaFe12O19 Films Sputtered on Pt-buffered Silicon Substrates

Author: ZhangLu
Tutor: SuXiaoDong
School: Suzhou University
Course: Condensed Matter Physics
Keywords: BaM thin films c-axis oriented magnetron sputtering Pt bufferlayer microwave properties
CLC: TM277
Type: Master's thesis
Year: 2011
Downloads: 30
Quote: 1
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Abstract


M-type barium ferrite (BaFe12O19, BaM) have received much attention as materials in monolithic microwave integrated circuits (MMIC), high density magnteic recording media, etc. These applications mostly benefit from the excellent chemical stability, high coercivity, high saturation magnetization, large vertical magnetocrystalline anisotropy, high resistivity and dielectric constant in high frequency of BaM. During the last decades, there has been a considerable progess of BaM thin film in microwave device applications. The development of oriented BaM films with high crystal quality and low mirowave losses is needed to use in microwave ferrite integrated circuit. In this paper, we prepared BaM films on Pt buffered Si substrates by using radio-frequency magnetron sputtering. The studies focuse on the influence of Pt buffer layers’ thickness and periodic structure to the microstructure, magnetic and microwave properties of BaM films.The results shows it is difficult to prepare c-axis oriented BaM films on Si (111) and Pt(200)/Ag(200)/Si(111) substrates, while the films exhibited strong c-axis perpendicular orientation benefiting from a Pt (111) buffer layer with thickness from 10 nm to 60 nm. The samples with Pt (111) buffer layer were employed a ferromagnetic resonance (FMR) measurement in a frequency range from 42 to 55 GHz. The microwave measurement showed that the lowest FMR linewidth is 399 Oe at 44 GHz with 20 nm Pt underlayer. For a comparison studies, we have prepared NiZn spinel ferrite films, which indicated a FMR linewith of 3468 Oe at 9.54 GHz.Next, we prepared BaM films upon Pt-buffered silicon substrates, where Pt bufferlayer is of microwave subwavelength periodic array. The results showed that the grain size and roughness of BaM film decreases along with the increasing thickness of Pt subwavelength array. While the Pt subwavelength array is 20 nm, the highest coercivity is Hc=1050 Oe. The microwave properties of the BaM films will be carried out in future work.In summary, a Pt buffer underlayer (10-60 nm) was employed to enhance the quality of BaM films deposited on Si substrates by radio frequency magnetron sputtering. We believe lower linewidths can be realized by further refinement of periodic pattern, processing conditions and post deposition heat treatments.

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CLC: > Industrial Technology > Electrotechnical > Electrical materials > Magnetic materials,ferrite > Ferrite,oxide magnetic materials
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