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Thick Film Hybrid Integrated Pressure Sensor

Author: GuLai
Tutor: SunChengSong；GuanYanXia
School: Shenyang University of Technology
Course: Microelectronics and Solid State Electronics
Keywords: Pressure sensor Thick Film Hybrid integration Temperature compensation
CLC: TP212
Type: Master's thesis
Year: 2005
Downloads: 230
Quote: 5
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Abstract


Diffused silicon pressure sensor output and the measured pressure is proportional , and has high sensitivity , good stability , measurement and high precision are widely used . Affected by the ambient temperature , diffused silicon pressure sensor will produce the output signal of the temperature drift , affect the performance of the sensor , the need for temperature compensation . Most of the products , force-sensitive components and temperature compensation circuit and signal amplifier circuit is relatively independent of the sensor volume can not be reduced and lead connections between each other is not conducive to anti-jamming , and impact on the seismic performance and reliability of the sensors . This topic is proposed in order to solve the above problem , the thick-film hybrid integrated pressure sensor development , exploration and mastery of a piezoresistive pressure sensor integrated technology . Paper first semiconductor theory and circuit theory discusses generates zero and temperature drift of sensitivity reasons , integrated pressure sensor circuit power supply , temperature compensation circuit and signal amplification circuit design methods , and thick-film hybrid integrated pressure the circuit diagram of the sensor ; compare several production process of the sensor circuit process flow sensor circuit are listed on the main process specific technical requirements . The thick-film hybrid integrated pressure sensor is developed in Shenyang Academy of Instrumentation Science . The design of the sensor circuit is a constant current power supply, the use of two-point compensation law the diffusion silicon force-sensitive component output to compensate for the resistance network in the form of temperature compensation ; integrated pressure sensor as a special integrated circuit , using thick-film technology and surface the assembly technique, in the form of a thick film hybrid integrated circuit , to achieve the integration of the diffusion silicon force sensitive element and the temperature compensation circuit and the signal amplifying circuit . Analysis of the test results in the development process , and to take measures to adjust accordingly Production . The test results show that the sensor performance to the original design specifications : output range of 0.25 ~ 4.75V, the output voltage operating range 0.5 ~ 4.5V, precision lt ; 3% FS design method is proved correct , the machining process is reasonable and feasible .

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