About 133 item dissertation in line with Hall Effect query results,the following is 1 to 50(Search took 0.02 seconds)
- Design and Experiment of Closed Loop Hall Effect Current Sensor,LiFuAn/Huazhong University of Science and Technology,0/43
- Study on Discharge Characteristics under Different Voltages of Hall Effect Thrusters,WangZhenRong/Harbin Institute of Technology,0/51
- 3D Measurement Method of Underground Displacement Based on Hall and MR Effect,ZhouZhen/,0/48
- Instabilities of Plasma with Both Sheared Magnetic Field and Shear Flow,LiJiaHui/Zhejiang University,0/24
- Anomalous Hall Effect in Cofeb-based Perpendicular Films,WuShaoBing/Huazhong University of Science and Technology,0/161
- TiO2Nano Thin Film Deposited by Frequency Reactive Magnetron Sputtering and Treated by Laser Irradiation,BiHan/East China University of Science and Technology,0/27
- The Propagation of Spinning Light in an Inhomogeneous Medium,LiHeHe/Shanghai University,0/24
- The Nonreciprocal Properties in Photonic Crystals,HeCheng/Nanjing University,0/47
- Steering the Polarization and Spin Hall Effect of Light Via Man-made Microstructures,LingXiaoHui/Hunan University,0/7
- Cross-polarization Characteristics in Photonic Spin Hall Effect,LuoXing/Hunan University,0/2
- Artificial gauge fields in BEC,YeChong/Chinese Academy of Engineering Physics,0/19
- Development of Hall Digital Control Device in Satellites’ Fault Automatic Recognition and Management,ZhangLeJun/Xi'an University of Electronic Science and Technology,0/23
- Technology Development of an Astronautic High Precision Hall Current Sensor,WanLi/Xi'an University of Electronic Science and Technology,0/115
- Research and Design of the Switch-Type Integrated Hall Sensor,ZhangTan/University of Electronic Science and Technology,0/36
- Uncontact Current Measurement Sensor Theory Research and Application,ZhuLing/Shanghai Jiaotong University,0/185
- Study on Non-Contact Position Sensor Based on Hall Effect and Application,YinYouJun/Shanghai Jiaotong University,2/449
- The Electrical Transport Properties of InN under High Pressure,ZhangJiYe/Jilin University,0/21
- The Soft X-ray Spectroscopy Study on Novel Material of Magnetic Semiconductors and Diamondoids,QiaoRuiMin/Shandong University,0/62
- A Study of Lightning Surge Current Detection Method,HaoJiangTao/Changchun University of Science and Technology,0/69
- Electronic Transport Properties in Co2FeSi Heusler Compound Films and Co2FeSi-Al2O3Granular Films,QinZhu/Tianjin University,0/24
- Influences of Sub-Alfvénic Shear flow on Tearing Mode Instability,LiLingJie/Zhejiang University,0/18
- Hybrid Simulation Studies for Profile Effect of Shear Flows on the Magnetic Reconnection,ShiWenJing/Dalian University of Technology,0/8
- The Plasma Influence on the Magnetic Reconnection Rate in the X-line Region,ZuoShuiPing/Nanchang University,0/33
- The Electrical Transport Behavior and Electronic Structure of CrO2under High Pressure,ZhangXiaoZuo/Jilin University,0/39
- The Structural Behavior and Electrical Properties of CaB4、MTeO3(M=Ba, Sr)、CuInX2(X=S, Se) under High Pressure,LiYan/Jilin University,0/114
- Negative Refraction and Beam Shift in the Metamateirals with Anisotropy or Chirality,HuangYanYan/Suzhou University,0/122
- Investigation on the Reversed Spin Hall Effect of Light Caused by the Refractive Index Gradient,ZhaoGuiPing/Hunan University,0/17
- Conductance Quantization in2D Topological Insulator with a Defect,ZhangLiMin/Hebei Normal,0/19
- Theoretical Study of Finite-Size Effects in Quantum Spin Hall Systems,LuFeng/Nanjing University,0/134
- The Epitaxial Growth, Magnetism, Transport and Photoluminescence Properties of ZnO-Based Diluted Magnetic Semiconductors,BaiHongLiang/Shandong University,0/216
- Condensed state physics in topological phenomena,ZuoJiaDong/Fudan University,0/443
- Strain Effects on Quantum Anomalous Hall Effect in Graphene,RenShuai/Hebei Normal,0/48
- Influence of Magnetic Field on the Electronic Properties of Graphene,ChenYing/Northeast Normal University,0/84
- Study on the Influencing Factors of Transverse Shift in Spin Hall Effect of Light Centroid,YinHongFang/Hunan University,0/24
- Study on Switching the Directions of Spin Accumulation of Spin Hall Effect of Light,WeiGuiPing/Hunan University,0/19
- Spin Hall Effect of Light in a Multilayer-Medium Structure,MaJuan/Hunan University,0/35
- Optical and Electrical Properties Studies of Different Ions Implanted Gallium Nitride,YouWei/Lanzhou University,0/455
- Spin-Hall Effect and Related Transport Property in Two-dimensional Spin-orbit Coupling System,WangChunMing/Shanghai Jiaotong University,0/458
- The Transport Properites of Novel Semiconductor Materials and Infrared Devices,YeHongBing/Shanghai Jiaotong University,0/427
- Preparation and Doping of Wide Band Gap Cubic Boron Nitride Films,HeBin/Beijing University of Technology,2/364
- The Study on Ⅲ-Ⅴ Group Material Growth of Quantum Structure and Correlational Spintronics,LiuLinSheng/Lanzhou University,0/292
- Microstructure, Magnetic and Transport Properties of Magnetic Nanogranular Films,MiWenBo/Tianjin University,2/472
- Tansport Properties of Metal-Insulater Granular Films,LiuZuo/Tianjin University,1/269
- Numerical Simulation of interplanetary disturbances, and the current sheet interaction,HuangFuCheng/Graduate School, Chinese Academy of Sciences,0/80
- The research and development of the Hall - phase sensor,FengMing/Shanghai Institute of Microsystem and Information Technology Research Institute,4/776
- The SIMOX SOI material infrared optical and electrical properties of,ChenKeZuo/Shanghai Institute of Microsystem and Information Technology Research Institute,0/158
- Higher Dimenssional Quantum Hall Effect, Solitons on Noncommutative Torus and Integrable Models,PengDanTao/Northwestern University,0/94
- Hall phase sensor assembly and its key technologies,HuShaoJian/Shanghai Institute of Microsystem and Information Technology Research Institute,1/608
- Investigations on Several Problems in Spintronics from Mesoscopic and Many-Body Approaches,ZhouJun/University of Science and Technology of China,0/313
- Studies of Collisionless Magnetic Reconnection by Using PIC Simulation,HuangJun/University of Science and Technology of China,1/148
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