About 19 item dissertation in line with tunneling current query results,the following is 1 to 50(Search took 0.090 seconds)

  1. Fabrication of Ge MOS Devices with La-based High-k Gate Dielectrics and Model of Gate Direct Tunneling Current,XuHuoXi/Huazhong University of Science and Technology,0/94
  2. Electrical and Electroluminescence Characteristics of GaN-based Light-Emitting Diodes,JiangRong/Nanjing University,0/100
  3. Research on the Effects of Polarization on the Current and Light Characteristics for UV-LEDs,MaJiZhao/Nanjing University,0/81
  4. Study of the GIDL Current and Related Reliability Issues for Ultra-deep Submicron CMOS Devices,ChenHaiFeng/Xi'an University of Electronic Science and Technology,0/226
  5. Model and Technology of High-k Gate Dielectric MOS Devices,ChenWeiBing/Huazhong University of Science and Technology,1/534
  6. Investigation of Semiconductor Surface and Single-molecule Electronics by Scanning Tunneling Microscope,ChenZuo/University of Science and Technology of China,0/394
  7. Design and Implementation of Power Management Chip Based on PWM Control,WuTieFeng/Xi'an University of Electronic Science and Technology,0/177
  8. Study of Fluorene Derivative in Raman Scattering and Electic Field Effect of Tunneling Current,XinHongLiang/South China University of Technology,0/61
  9. Studies on the High-K Gate Dielectrics MOSFET and Related Device Effects,LiGuiFang/Lanzhou University,0/270
  10. A Study on Test Technology of Nano Scale Vibration in Tunneling State,LiMengChao/Tianjin University,0/110
  11. Study on Thermal Stability and Tunneling Current of Ultrathin Gate Oxidation,LiFeng/Nanjing University of Technology and Engineering,0/109
  12. Electric properties of the hexagonal tubular ZnO thin films,ZhouZuo/University of Electronic Science and Technology,1/80
  13. The Quantum Phase of Mesoscopic Circuit Driven by a Classical Signal,LiuQing/Jiangxi Normal University,0/19
  14. Gate Leakage and Soft Breakdown Properties of Small-Scaled MOS Device,LiZongLin/Huazhong University of Science and Technology,1/167
  15. Deep sub-micron CMOS devices by gate oxide breakdown behavior (TDDB) and its mechanism,DongKe/Fudan University,0/150
  16. The Research and Fabrication of the Real Space Transfer Device,FengShanJun/Tianjin University,0/13
  17. Study on Electrical Characteristics of High-κ Gate Dielectric LaAlO3,ZhangZuo/Xi'an University of Electronic Science and Technology,0/31
  18. Dynamical Properties of Quantum Ring,GuoYanJiang/Ningbo University,0/7
  19. Modeling of Capacitance-Voltage and Tunneling Current of Mos Structure with Ultrathin HfO2 Gate Dielectric,HuBo/Zhejiang Normal University,0/29

Total 1 Pages First Previous 1 Next Last

© 2012 www.DissertationTopic.Net  Mobile