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Nickel silicide is used to the alkylene 0.1μmCMOS device technology

Author: JiangYuLong
Tutor: LiBingZong
School: Fudan University
Course: Microelectronics and Solid State Electronics
Keywords: NiSi Nickel silicide Solid-state reaction Single-step rapid thermal processing Two-step rapid thermal processing Redistribution of impurities Kirkendall effect Reaction kinetics The activation energy of the reaction Schottky barrier uneven distribution Surface contact characteristics The amorphization injection technology IC process
CLC: TN432
Type: PhD thesis
Year: 2005
Downloads: 177
Quote: 1
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Abstract

With CMOS integrated circuit manufacturing technology continues to advance to the sub-0.1 technology, materials and workmanship of the corresponding self-aligned silicide (SALICIDE) is constantly evolving innovation. The CoSi ₂ replace TiSi ₂ limit the effect of the narrow lines, used in the technology generation 0.25/0.18μm SALICIDE process. Compared with NiSi, recent studies show that, when the lines of the physical width of less than 40nm, the CoSi ₂ in a thin layer on the polysilicon resistor rises steeply. Therefore, NiSi is widely seen as the preferred material for research and development new generation SALICIDE process. Low temperature due to the formation of NiSi, Ni silicide reaction is always the dominant diffusing particles, so early studies that use single-step rapid thermal processing (RTP) can be. However, recent experiments have shown that, the NiSi SALICIDE using a single-step RTP process led over the edge of the active region of the device silicide serious damage to the electrical characteristics of the device. Studies have shown that, using the two-step RTP can inhibit the formation of NiSi excessive silicide reaction, but there are many of this NiSi SALICIDE process materials and processes need to be resolved. In this thesis studied the Ni / Si solid phase reaction rule and two-step RTP NiSi SALICIDE process technology in the lower temperature range. The main contents and results grouped into the following four parts: 1. Thesis ultra-thin Ni film on shallow junction re-doped n / p and p / n-type silicon substrate, the low temperature range Ni / Si solid phase reaction , and analyzed the changes and the reasons of the composition, structure and properties of nickel silicide film. - Experiments confirmed from the perspective of the actual production in the first annealing step and the second-stage annealing process window there are two doped substrate. - Was found that after the first-stage low-temperature annealing, the sheet resistance of the p / n-Si substrate in the same thickness of the Ni film silicidation reaction much larger value of the ratio N / p-Si substrate. Test analysis showed that the type of silicide formed on the two substrate grain size is the main cause of this difference. - It was found that in the heavily doped substrate Ni / Si reaction leads to significant impurities (As, B) redistribution: the formation of an impurity-rich peak in the interface, the silicide / Si; few nanometers below the surface of the silicide film place there is another impurity enrichment peak. Kirkendall voids effect of Ni / Si solid phase reaction process (Kirkendall voiding effect) is caused by impurities enriched peak near the surface of the silicide. - The position of the cavity layer in the film according to the Kirkendall, the study found that the reaction of Ni / Si, Ni atoms are the dominant diffusion particles, but the Si atoms will diffuse to the film, Ni participate in the reaction. To better understand and better control the first low-temperature annealing of the Ni / Si reaction, the paper systematically studied Ni ₂ Si film formation kinetics. - The paper established a Ni / Si solid phase reaction formation of Ni ₂ Si film A kinetic model that is linear - parabolic film growth model. - The experiments found, Ni _{the 2} Si film in the n / p-Si substrate on the ratio p / n-Si substrate is more stable.

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