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Preparation and Properties of Pb(Zr0.96Ti0.03)Nb0.01O3/La0.5Sr0.5CoO3 Heterojunction

Author: PanGang
Tutor: LiuShiJian;WangGenShui
School: Shanghai Normal University
Course: Theoretical Physics
Keywords: PZNT XRD SEM LSCO hysteresis loop antiferroelectric energy storage density
CLC: O484.1
Type: Master's thesis
Year: 2009
Downloads: 24
Quote: 0
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Abstract


LSCO(La0.5Sr0.5CoO3) is a kind of important perovskite type metal oxide. It is a perfect candidate as the bottom electrode of ferroelectric PbZrxTi1-xO3（PZT） thin film,for they have similar lattice structure and lattice constant,matching each other very well.Better thermal stability of LSCO made the interface between them clear.By a proper method,LSCO can be prepared on SiO2/Si and metal oxide substrate,with smooth surface and prefered orientation.PZT on LSCO has lower leakage current and stronger fatigue resistance.It was reported that Zr riched perovskite antiferroelectric PbZrxTi1-xO3（PZT） have perfect energy storage properties,which can be improved by doping.La doped PbZrO3 have it energy storage density high at 14.9J/cm3.The hysteresis of Nb doped PZST have better character than that of La doped.Research on antiferroelectric propertise of Nb doped PZT ceramic film Pb(Zr0.96Ti0.03)Nb0.01O3[PZNT]has great significant.In the experiment of this thesis,PZNT/LSCO heterostructure was prepared on SiO2/Si（100） by sol-gel method.First,annealling process dependence of structure and conductive properties of LSCO/SiO2/Si（100） was researched.The surface of LSCO/SiO2/Si（100） was got by AFM.Second, compared with PZNT/LNO and PZNT/Pt,structure,energy storage and dielectric properties of PZNT/LSCO was researched,for achieving better energy storage properties. The result shows that,the orientation of LSCO thin film prepared by sol-gel was random.It is not affected by heating rate and pre-annealing temperature,and is difficult to form high smoothness surface.High（100） oriented LSCO can be formed using a buffer layer of （100） oriented LaNiO3.AFM graph show that LSCO film has texture structure. It is believed that the asymmetrical stress of the film bringed from the texture structure induced the rough surface and random orientation growth. By comparing with Pt/PZNT/Pt and Pt/PZNT/LNO,it was found that PZNT on LNO and LSCO have better square characters,energy storage density of PZNT increasing with the intensity of（111） orientation of the film. Energy storage density of them is 6.55J/cm2（on LNO）,5.54 J/cm2（on LSCO）, and 7.05 J/cm2（on Pt）.Energy storage density of PZNT was greatly dependent on the three parameters of P-E loop.Better square character, lower remnant polarization and higher saturation polarization benefit higher energy density.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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