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AlGaN / GaN microwave power device modeling power combiner

Author: ZouXiang
Tutor: YuQi
School: University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: AlGaN / GaN HEMT Small-signal model Large - signal model Power combiner
CLC: TN386
Type: Master's thesis
Year: 2010
Downloads: 192
Quote: 0
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Abstract


In recent years, with the performance of electronic devices , high-temperature , high-frequency , high-power , anti- radiation continuously improve the GaN material as representatives of third-generation semiconductor materials has been developed rapidly . AlGaN / GaN HEMT devices there are broad prospects and great potential applications in high-temperature , high-frequency , high-power , anti-radiation . Accurate device model , it is crucial for the design of microwave and RF circuitry . The paper around the AlGaN / GaN HEMT device model to carry out research , the establishment of AlGaN / GaN HEMT device equivalent circuit model parameter extraction , and synthesis of microwave power analysis, design based on AlGaN / GaN HEMT microwave power combiner circuit . First of all, the AlGaN / GaN HEMT device structure and working principle , and several small-signal models are analyzed . Small signal linear analyzes the AlGaN / GaN HEMT small signal equivalent model discussed in detail , the establishment of appropriate small-signal equivalent model to study the extraction of the model parameters . Then , based on large-signal operation state , introduced several large-signal DC IV characteristics model , Angelov model as the basis for a large - signal model study . Finally, the microwave power combiner amplifier classification describes the design of the center frequency of 5.0GHz for microstrip Wilkinson power distribution / synthesizer , and the AlGaN / GaN HEMT microwave power amplifier circuit design , the center frequency of 5.0GHz , single-tube the maximum output power of the power amplifier 32dBm power added efficiency of 34% and the double tube power amplifier maximum output power of 35.3dBm , power added efficiency of 28% .

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