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AlGaN / GaN HEMT device modeling and synthesis of power

Author: ChenLi
Tutor: XiaJianXin
School: University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: AlGaN / GaN HEMT Equivalent circuit model Self-heating effects Power combiner
CLC: TN386
Type: Master's thesis
Year: 2008
Downloads: 302
Quote: 1
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Abstract


GaN is developed rapidly in recent years, the third generation of wide band gap semiconductor material , AlGaN / GaNHEMT in high temperature, high-power , high-frequency , radiation and other fields have broad application prospects . Accurate modeling of the device to improve the RF and microwave circuit design success rate, shorten the development cycle of the circuit is very important. This paper established the AlGaN / GaN HEMT device equivalent circuit model , and the model was designed based on the AlGaN / GaN HEMT microwave power combiner circuit . Firstly, based on conventional HEMT small- signal model proposed for the AlGaN / GaN HEMT small-signal equivalent circuit topology and accurate small-signal model parameter extraction method . Establishing small-signal equivalent circuit model has relatively simple, precise and broadband (0-10GHz) and other features for large signal analysis to provide the necessary data to support . Then, HEMT devices from several common DC IV characteristics of large-signal model, the more significant for GaNHEMT device self-heating effects , the paper Curtice cubic large-signal model, by modifying its large -signal equivalent circuit topology , increasing device characterization self-heating effects of thermal circuit ; IV characteristics and improved model expression , the introduction of temperature on the output characteristics of the device , making the device IV characteristics model more accurately reflects the actual device operating characteristics . Followed by a detailed analysis of AlGaN / GaN HEMT device large-signal capacitance model . Finally, to obtain a large output power, the use of hybrid amplifiers in parallel to achieve the multi- power synthesis. In this paper established AlGaN / GaN HEMT device model , based on the use of microstrip Wilkinson power divider / combiner , the design of GaN HEMT microwave power combiner circuit . Circuit at the center frequency of 3.5GHz , the maximum output power of 3.5W, power added efficiency of 32%.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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