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Patterned silicon substrate silicon germanium quantum dots grown
Author: ChenPeiZuo
Tutor: ZhongZhenYang
School: Fudan University
Course: Condensed Matter Physics
Keywords: Self-assembly Nanosphere lithography Patterned substrate SiGe quantum dots Molecular beam epitaxy Originally force microscopy
CLC: O469
Type: Master's thesis
Year: 2009
Downloads: 97
Quote: 1
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Abstract
In this paper a new cycle of controllable pattern of large area amorphous silicon pit method for preparing a substrate . First, the use of self-assembly at a hydrophobic silicon ( 001 ) surface of the layer arranged in an orderly arrangement of polystyrene nanospheres dense film , nanospheres of diameter in the range 1.6 microns to 10 nm. Nanospheres then sprayed gold film as a template , with the catalytic oxidation of gold to silicon , the silicon surface of a gold grid - silica template . After the removal of polystyrene nanospheres , using anisotropic KOH etching of the silicon , the silicon surface to form a pit -shaped substrate, two-dimensional ordered pattern , the pattern period is equal to the diameter polystyrene spheres . Polystyrene spheres used by adjusting the size of the pattern period can be adjusted accordingly from several microns to 100 nm or less. Meanwhile , chemical etching of silicon by adjusting the parameters of the pit shape can regulate the morphology pattern . Thus making a pit -shaped pattern on a substrate grown by molecular beam epitaxy system silicon germanium quantum dots can be achieved on silicon-germanium quantum dot nucleation sites controlled. In addition , we studied the effect of temperature on the pit -shaped pattern on a substrate of silicon germanium quantum dot growth. Corresponding to different temperatures, three different growth : (ⅰ) limited the growth of power at low temperatures ; (ⅱ) intermediate appropriate temperature ordered quantum dots ; (ⅲ) temperatures disordered quantum dots . This article from the perspective of qualitative explanation of the dynamics at different temperatures the growth of quantum dots . This qualitative interpretation can be ordered as an optimization quantum dots on patterned substrate growth parameters of reference.
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