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Layered Growth Model for Alloys of Groups Ⅲ-Ⅴ and Ⅳ

Author: SuXiaoAo
Tutor: DaiZhenHong
School: Yantai University
Course: Theoretical Physics
Keywords: First-principles calculations Ising model Epitaxial growth Layer growth
CLC: O471
Type: Master's thesis
Year: 2009
Downloads: 30
Quote: 0
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Abstract


Of Ⅲ - Ⅴ elements and IV group elements has a special electronic structure elements , and these elements semiconductor material , with a wide range of applications in our life is the focus of research at home and abroad . We are mainly in repeated on the basis of the ordered structure of the SiC growth , the growth process of the material of the SiCAlN done research based on the first principle of the quantum mechanics calculation and simulation dynamics growth environment . Epitaxial layer growth model growth mode , which is the main method used by the orderly structure of the material we study . Since epitaxial growth is a non-equilibrium process , the dynamic characteristics of the epitaxial growth process is a major factor in the control structure is formed . Expansion method and first principles calculations we use Group by combining the interaction energy between atoms ; then we epitaxial growth is controlled by adjusting the growth temperature or growth rate dynamics process , and ultimately the formation of ordered structures . Kinetic anisotropy cause ordered orientation of the grown layer is changed with the change of the growth conditions , we have found that in the epitaxial growth process . Chapter mainly on the main work of this paper , first introduced the main growth model used in the research process , and the basis of the model we use , research of SiC and SiCAlN done given general description . Chapter II focuses on the calculated course of the study . The third chapter we before research on SiCAlN , in others on the basis of study of SiC material with a layer growth model to simulate the work of others . Finally, we the SiCAlN done research , described in detail in the the the kinetic layer growth process , the object may appear orderly structure , and do a calculation of the electronic properties of this material short period ordered structure .

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductive Theory
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