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Dual FET pressure pulse width pulse source technology along faster

Author: WangXin
Tutor: ZhangFuTang
School: Chinese Academy of Engineering Physics
Course: Physical Electronics
Keywords: high voltage power MOSFET ns grade pulse edge wide pulse width Over spike driving
CLC: TN386
Type: Master's thesis
Year: 2005
Downloads: 373
Quote: 10
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Abstract


In this paper, we mainly study on a kind of high-voltage pulser with low jitter, wide pulse width and fast front and back pulse edge, which is based on high-voltage power MOSFET. The two research directions including vacuum tube and solid state device such as hydrogen thyratron, avalanche transistor, power MOSFET are discussed in details on their switching principled and switching characteristics. The research for increasing the switch speed of high--power and high-voltage MOSFET of the gate and special over-spiking driving are studied in great details also. After comparison between the designs of fast edge and wide pulse width pulser based on the 3 devices mentioned above, we decide to take the power MOSFET scheme in our circuit. In our design, by using ORCAD Pspice, simulation is made to validate the theory of driving single one high-power and high-voltage MOSFET and series MOSFET of that kind, and to research on how to increase pulse edge, so as to optimize the circuit design. Experiments are made to test and analyze some kinds of MOSFET gate driving circuits to get the best driving. Formed by high voltage avalanche transistor and pulse transformer, the special heavy current over spiking driving circuit is used for driving series high-power MOSFET. The final output pulses with amplitude larger than 4kV, pulse width larger than 0.5μs, pulse edge less than 5ns and jitter of single trigger less than 2 ns are obtained.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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