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Fabrication of Porous Silicon and Research on Luminescence of PS

Author: JiangZhenHua
Tutor: DuanMuQingZuo
School: Changchun University of Science and Technology
Course: Physical Electronics
Keywords: Porous silicon Preparation Porosity Photoluminescence
CLC: O472.3
Type: Master's thesis
Year: 2011
Downloads: 62
Quote: 0
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Abstract


In this paper, the traditional electrochemical anodic corrosion prepared p -type porous silicon . By scanning electron microscopy to observe the morphology of the p-type porous silicon surface and the corrosion weight loss calculated porosity of porous silicon p -type silicon layer and the thickness of the etching time , current density and HF concentration in the p- type porous silicon prepared by anodic etching conditions affected. The results show that , with the etching time , the current density and the gradual increase in the HF concentration p-type porous silicon pores first increases and then decreases as the etching time , the current strength and the increase of the HF concentration , p -type porous silicon thickness gradually increases linearly relationship . By using a fluorescence spectrophotometer measured at room temperature p -type porous silicon photoluminescence study etching time , the current density and HF concentration on the p -type porous silicon anodic etching photoluminescence characteristics. The results show that increasing the etching time , current density and HF concentration can cause p -type porous silicon photoluminescence peak blue shift change . Finally, optimized by orthogonal experiment method, the p -type porous silicon photoluminescence prepared electrical anodic corrosion conditions were optimized . Determine the optimum p-type porous silicon photoluminescence prepared by electrochemical anodic corrosion conditions: etching time 30min, the current density 12mA/cm2, HF concentration 6wt%.

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductor Properties of > Optical Properties
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