Dissertation > Excellent graduate degree dissertation topics show

Preparation and Mechanism of Cubic Boron Nitride Films

Author: QiGang
Tutor: LeYongKang
School: Fudan University
Course: Condensed Matter Physics
Keywords: Cubic Boron Nitride Film Magnetron sputtering Simulation Film rupture
CLC: O484.1
Type: Master's thesis
Year: 2007
Downloads: 72
Quote: 0
Read: Download Dissertation

Abstract


Cubic boron nitride (CBN) is a synthetic semiconductor material, has good physical and chemical properties, and has a broad application prospects in terms of thermal, mechanical, optical, electronics, preparation and properties of cubic boron nitride films The study by the widespread concern. In this paper, the preparation of cubic boron nitride thin film growth, the role of oxygen and DC bias conditions. The hBN target for preparing cubic boron nitride film on a Si substrate by RF magnetron sputtering, the working gas of a mixed gas of argon and nitrogen. The process parameters of the RF power, substrate bias and temperature, the nitrogen content in the working gas. It was found that the cubic boron nitride film growth conditions window. Opposing isotropic growth substrate bias has an important influence, there is a bias voltage threshold value, lower than the value of the cubic boron nitride growth can not bias the threshold value and the other process parameters, the DC bias in our experiments pressure, RF power 130W, bias threshold value is-160V. The nitrogen content in the working gas is also a threshold value, the threshold value of 1.5%. In the case of adequate nitrogen and oxygen is formed hinder the introduction of opposing isotropic cubic phase will not be able to form a great amount of oxygen. When the nitrogen content in the cubic phase is formed near the threshold, the role in promoting the formation of small quantities of oxygen opposition isotropic. The main reason for this phenomenon is oxygen more easily combined with boron, contribute to the stoichiometry of the boron nitrogen to obtain a small amount of oxygen in the working gas when the nitrogen content is less than the oxygen content is too high Shiyou impede stoichiometry obtained. Using computer simulation of boron nitride deposition process, the ion bombardment of the film component, the ion energy and angle have a greater impact on the effect of the thin-film sputtering. The ion incident angle is 60 °, the maximum rate of ion sputtered film, a sputtering rate also increases with the increase of the ion energy, while the boron nitrogen sputtering rate ratio decreases. Simulation results demonstrate that the boron nitrogen component of the film in the case of nitrogen content is less than the ion bombardment can make ideal for the growth ratio of the cubic phase is 1:1, thereby facilitating the formation of a cubic phase. The use of microscopic observations of the boron nitride thin film rupture, rupture the case under different conditions by a thin film of hexagonal boron nitride film and containing cubic phase, results not only associated with the stress in the rupture of the boron nitride, and also with chemical reactions

Related Dissertations

  1. The Setting Bases of Working Pressure in LNG Systems and Orthogonal Experiment Design of Heat Exchangers,TQ051.5
  2. Study of Interaction between Epoxy Molecules and Carbon Fiber Surface with Molecular Simulation,TB332
  3. Research on Mechanism Analysis and Modeling Simulation of Horizontal Well Tractor,P631.83
  4. Study on Springback of High-Strength Steel Stamping,TG386
  5. Technology of Filling Clearance and Optimizing the Bonds during Ultrasonic Brazing,TG454
  6. Numerical Simulation and Experiment on Hydroforming of Cups with Controllable Radial Pressure,TG386
  7. Research on Technology and Mechanism of Joining Cemented Carbide to Carbon Steel,TG454
  8. Flow Field Numerical Simulation and Performance Analysis for the Conical Hydrostatic Bearing,TH133.36
  9. The Brake Performance of Hydraulic Retarder and Simualtion Research on Its Application for Aircraft Arrestment,TH137.331
  10. Satellite Attitude Determination Based on Gyro and Star Sensor,V448.2
  11. Numerical Simulation of Film Cooling in Turbine Cascade with Non-Axisymmetric Endwall Method,V231.3
  12. Research on Orbital Control Method for Space Rendezvous and Docking,V526
  13. High Speed Aerodynamic Convection and Coupled Heat Transfer of Complicated Bodies,V215.4
  14. The Analysis on Characteris of Vibration Source about Vertical Vibration of Surrounding Environment Induced by Rail Transit,U211.3
  15. Single Neuron PID Control for Electro-Hydraulic Servo Unit of Ship Rudder,U666.152
  16. Simulation Analysis on Temperature Stress of RCC Arch Dam and Its Construction Joints Design Research,TV642.2
  17. Study on the Heat Transfer Characteristics of Particle Cluster in Circulating Fluidized Bed,TK124
  18. Numerical Simulation of SNCR Process of a 600MW Utility Boiler,TK222
  19. Numerical Simulation of Biomass Direct Reburning,TK16
  20. Numerical Simulation on Pulverized Coal Combustion Process in a 670T/H Tangential Firing Furnace,TK224.11
  21. Numerical Simulation on the Combustion Process in the Furnace of a 1000MW Lignite-Fired USC Boiler,TK224.11

CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
© 2012 www.DissertationTopic.Net  Mobile