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Silicon wafer doped with with solid phosphorus diffusion source is a chip at room temperature , stable performance, can break down and stabilize the release of P2O5 functional ceramic materials at high temperatures . By sol - gel method and synthetic LaP5O14 powder , and the powder as raw material , prepared by pressureless sintering silicon wafer doped solid-state phosphorus diffusion source film . DSC-TG, DTA-TG, XRD, SEM and other means of testing the test samples were characterized by the following conclusions : 800 ° C insulation 5h calcined system , synthetic crystalline phase to columnar structure LaP5O14 based powder , crystal size 10 ; powder LaP5O14 at 850 ℃ decomposition and release release P2O5 evenly , similar to the linear relationship between weight loss and time , the powder at 850 ° C insulation a 5h weight loss LaP5O14 of is proportional to the amount of . The same time , studies have shown that with the improvement of the calcination temperature , LaP5O14 content first increases and then a decreasing trend , smaller crystal size increased ; With the holding time LaP5O14 content increase in crystal size increases . Add to phosphate glass as a raw material to LaP5O14 powder as sintering aids were prepared at 900 ° C for 1h system sintered phosphorus diffusion source film , along with the increase of the sintering temperature , decomposition, phosphorus diffusion source sample LaP5O14 content decreased stomatal first decreases and then increases , grain size and density first increases and then decreases , reduce the rate of weight loss of the phosphorus diffusion source film ; phosphorus diffusion source samples LaP5O14 decomposition with the holding time , content decreased, reduced porosity , grain size increases, the weight loss rate of the phosphorus diffusion source film decreases ; Add phosphate glass has no influence on the composition of the phosphorus diffusion source film , but with the increase in the amount of glass , phosphorus diffusion source film porosity and lower softening point , density first increases and then decreases ; increase the with diffusion temperature increased , the rate of weight loss of the phosphorus diffusion source film .
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