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Study on Strcuture Control and Properties of SiC-Based One Dimensional Nanostructures

Author: WangXiuChun
Tutor: TangBin；YangWeiYou
School: Taiyuan University of Technology
Course: Materials Processing Engineering
Keywords: SiC CVD Heterojunction Nanowires Growth Mechanism
CLC: TB383.1
Type: Master's thesis
Year: 2011
Downloads: 46
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Abstract


With the development of nanotechnology , the study and application of the one-dimensional semiconductor nanomaterials increasingly caused widespread concern . SiC-based - dimensional nanomaterials not only focused on the advantages of SiC and - dimensional nanomaterials , still has excellent properties in terms of electromagnetic , optical , thermal and mechanical properties , in the field of composite materials, electronic devices and other potential development . The SiC nano heterojunction materials inherits the advantages of SiC - dimensional nanomaterials based on a collection of excellent properties of other materials , further broaden its applications . Therefore , research the synthesis and properties of SiC- dimensional nanomaterials and SiC nano heterojunction has far-reaching significance . This thesis by surrounding SiC nano heterojunction controllable growth study , developed novel hetero structure using chemical vapor deposition (CVD) method for the preparation of means , optimizing the conditions of preparation of the process parameters to achieve the large area and quality prepared SiC-SiO2 heterojunction controlled SiC -CNT / C heterojunction arrays and SiC / C nanocables the SiC base - dimensional nanomaterials structure - performance regulation . System study its XRD.SEM.TEM of Raman and XPS data , analysis and their growth mechanism , the research results are as follows : ( 1 ) preparation of a diameter of about 1 OOnm length of tens of microns 3C-SiC nano line to obtain the optimal process parameters in SiC nanowire growth mechanism follows the VLS growth mechanism ; (2) the preparation of three-dimensional mesh SiC-SiO2 core - shell heterostructure proved its excellent UV light-emitting ability to follow VLS growth mechanism growth mechanism ; (3) the preparation of novel SiC -CNT / C heterojunction array, its structure is amorphous layer C wrapped multi-walled carbon nanotube array , and the head of the CNT / C SiC particles , the growth mechanism top growth mechanism and the density limiting mechanism together ; (4) preparation of a novel core - shell cable structure of SiC / C , follow the two-step method SLS growth mechanism , and prove the SiC nucleation surface modified carbon layer will not only improve its electrical transport properties , and the SiC surface from hydrophilic to hydrophobic .

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