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This thesis analyzed theoretically and InP-based arsenide antimonide basic properties of semiconductor materials, including through the binary and ternary material parameters calculated by linear interpolation InGaAlAs, InGaAsSb quaternary material lattice constant, band gap etc., and the width of the forbidden energy band considered in the calculation of the correction amount due to bending (bow). On this basis, using the effective mass model of the 4 × 4 Luttinger-Kohn Hamiltonian matrix InGaAlAs / InGaAsSb strained quantum well energy band structure, the lasing wavelength of theoretical analysis and design optimization discussed and calculated using the mechanical equilibrium model This strain when grown material system at the critical thickness. These theoretical analysis and optimization of the laser structure and components of different layers of material, thickness and other parameters, the material growth and device fabrication to provide a theoretical basis. As we all know, InP substrate, a semiconductor laser as the optical communication light source plays an important role, and in the optical communication wavelength 1.3μm and 1.55μm with a high performance single mode lasers have been put into practical use. InP-based InGaAlAs / InGaAsSb strained quantum well material although relatively narrow wavelength range (1.6-2.5μm), but it GaSb substrate AlGaAsSb / InGaAsSb materials, the quality of the substrate and device technology and other aspects and advantages reflected aroused attention. Using InP substrate material for antimonide epitaxial growth and study of the structure, one can draw the epitaxial growth of InP-based materials and device technology's successful experience, the other will in the future play an important role in integrated photonics. Therefore, this thesis focuses on the InP substrate, InGaAs, InAlAs, InGaAlAs, InGaAsSb preparation of materials and structures and characteristics. Solid-state source molecular beam epitaxy (SSMBE) device, grown on the InP substrate layer InGaAs, InAlAs, InGaAlAs, InGaAsSb material. By epitaxial material surface morphology, interface characteristics, quality, and luminescence characteristics lattice were studied and analyzed, the results showed a good surface state of the substrate and the appropriate growth temperature is the preparation of high-quality epitaxial material prerequisite. By optimizing the molecular beam epitaxial growth parameters and technology, growing out of the higher quality InGaAs, InAlAs, InGaAlAs, InGaAsSb single crystal material. In the above work, based on the initial growth of InGaAlAs / InGaAsSb single quantum well structure, and studied the luminescence properties, for the preparation of high-performance laser foundation.
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